IAUC100N10S5L054 - Infineon

IAUC100N10S5L054 Power Transistor

IAUC100N10S5L054 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 5.4 mW 100 A PG-TDSON-8-34 1 1 Type Packa.

Features

• OptiMOS™ power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• MSL1 up to 260°C peak reflow
• 175 °C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 5.4 mW 100 A PG-TDSON-8-34 1 1 Type Package Marking IAUC100N10S5L054 PG-TDSON-8-34 5N10L054 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) ID I D,pulse V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, RthJA on 2s2p 2,4) T C=.