IAUC120N04S6L009 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.9 mW 120 A PG-TDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Product (RoHS compliant) 1 • 100% Ava.
• OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 0.9 mW 120 A
PG-TDSON-8
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
• Green Product (RoHS compliant)
1
• 100% Avalanche tested
Type IAUC120N04S6L009
Package PG-TDSON-8
Marking 6N04L009
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=10V
T C=25°C, V GS=10V2,3)
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUC120N04S6L005 |
Infineon |
Power Transistor | |
2 | IAUC120N04S6L008 |
Infineon |
Power Transistor | |
3 | IAUC120N04S6N006 |
Infineon |
Power Transistor | |
4 | IAUC120N04S6N008 |
Infineon |
Power Transistor | |
5 | IAUC120N04S6N009 |
Infineon |
Power Transistor | |
6 | IAUC120N04S6N010 |
Infineon |
Power Transistor | |
7 | IAUC120N06S5L022 |
Infineon |
Automotive MOSFET | |
8 | IAUC120N06S5L032 |
Infineon |
Power Transistor | |
9 | IAUC120N06S5N011 |
Infineon |
Automotive MOSFET | |
10 | IAUC120N06S5N017 |
Infineon |
Power Transistor | |
11 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
12 | IAUC100N04S6L025 |
Infineon |
Power Transistor |