IAUC120N04S6N006 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.6 mW 120 A PG-TDSON-8-53 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 1 • Green Product (RoHS compliant) • 100% Av.
• OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on),max ID
40 V 0.6 mW 120 A
PG-TDSON-8-53
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
1 1
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IAUC120N04S6N006 PG-TDSON-8-53 6N04N006
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain current
Pulsed drain current5) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Ope.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IAUC120N04S6N008 |
Infineon |
Power Transistor | |
2 | IAUC120N04S6N009 |
Infineon |
Power Transistor | |
3 | IAUC120N04S6N010 |
Infineon |
Power Transistor | |
4 | IAUC120N04S6L005 |
Infineon |
Power Transistor | |
5 | IAUC120N04S6L008 |
Infineon |
Power Transistor | |
6 | IAUC120N04S6L009 |
Infineon |
Power Transistor | |
7 | IAUC120N06S5L022 |
Infineon |
Automotive MOSFET | |
8 | IAUC120N06S5L032 |
Infineon |
Power Transistor | |
9 | IAUC120N06S5N011 |
Infineon |
Automotive MOSFET | |
10 | IAUC120N06S5N017 |
Infineon |
Power Transistor | |
11 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
12 | IAUC100N04S6L025 |
Infineon |
Power Transistor |