H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07, 2012 Features Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low drive power High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ).
Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
Low drive power
High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) )
D 4
123
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature S.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H5N2005DL |
Renesas |
MOSFET | |
2 | H5N2005DL |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | H5N2003P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | H5N2004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | H5N2004DS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
9 | H5N2007FN |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | H5N2008P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
11 | H5N2305PF |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching | |
12 | H5N2306PF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |