Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
H5N2005DS |
Click to view a larger image
| Part Number | H5N2005DS |
| Manufacturer | Hitachi Semiconductor |
| Description | To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric ... |
| Features |
• Low on-resistance www.DataSheet4U.com • Low drive current • High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation www.DataSheet4U.com Symbol VDSS VGSS ID ID Note 1 (pulse) Ratings 200 ±30 (6) (24) (6) Unit V V A A A A W °C/W °C °C I DR I DR Note 1 (pulse) (24) 25 5 150 –55 to +... |
| Document |
 H5N2005DS Data Sheet
PDF 89.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H5N2005DL |
Renesas |
MOSFET |
|
| 2 | H5N2005DL |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H5N2005DS |
Renesas |
MOSFET |
|
| 4 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|