H5N2001LD, H5N2001LS, H5N2001LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1339-0600 Rev.6.00 Jul 14, 2006 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS.
• Low on-resistance
• Low leakage current www.DataSheet4U.com
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1 1 2 3
H5N2001LD
H5N2001LS
D
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4 G
1
2
3
S
H5N2001LM
Rev.6.00 Jul 14, 2006 page 1 of 7
H5N2001LD, H5N2001LS, H5N2001LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | H5N2003P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | H5N2004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | H5N2004DS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | H5N2005DL |
Renesas |
MOSFET | |
7 | H5N2005DL |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | H5N2005DS |
Renesas |
MOSFET | |
9 | H5N2005DS |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | H5N2007FN |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
11 | H5N2008P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | H5N2305PF |
Renesas Technology |
Silicon N Channel MOSFET High Speed Power Switching |