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H5N2005DS |
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| Part Number | H5N2005DS |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | H5N2005DL, H5N2005DS 200V - 6A - MOS FET High Speed Power Switching Preliminary Datasheet R07DS0796EJ0400 (Previous: REJ03G1104-0300) Rev.4.00 Jun 07, 2012 Features Low on-resistance RDS(on) = 0.5... |
| Features |
Low on-resistance RDS(on) = 0.52 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) Low drive power High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S) ) D 4 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature S... |
| Document |
 H5N2005DS Data Sheet
PDF 78.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | H5N2005DL |
Renesas |
MOSFET |
|
| 2 | H5N2005DL |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 3 | H5N2005DS |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 4 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
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