H5N2004DL - Renesas Technology

H5N2004DL Silicon N Channel MOS FET High Speed Power Switching

H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) • High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A) • Low gate ch.

Features

www.DataSheet4U.com
• Low
• Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V)
• High speed switching: tf = 10 ns typ (at VGS = 10 V, VDD = 100 V, ID = 4 A)
• Low gate charge: Qg = 14 nC typ (at VDD = 160 V, VGS = 10 V, ID = 8 A)
• Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) G 1 2 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2004DL, H5N2004DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to.