H5N2007FN - Renesas Technology

H5N2007FN Silicon N Channel MOS FET High Speed Power Switching

H5N2007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0370-0100Z Rev.1.00 May.28.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain curre.

Features

• Low on-resistance
• Low leakage current www.DataSheet4U.com
• High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID .