H5N2305PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0026-0200Z Rev.2.00 Jun.25.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2305PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source.
• Low on-resistance
• Low leakage current www.DataSheet4U.com
• High speed switching
Outline
TO-3PFM
D
G 1 S 1. Gate 2. Drain 3. Source
2
3
Rev.2.00, Jun.25.2004, page 1 of 9
H5N2305PF
Absolute Maximum Rating
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 35 140 35 140 18 60 2.08 150
–55 to +150 Rating V V A A A A A W °C /W °C °C Unit
Avalanche current IAP Note3 Channel dissipation Pch Note.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | H5N2306PF |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
2 | H5N2001LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
3 | H5N2001LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
4 | H5N2001LS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
5 | H5N2003P |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
6 | H5N2004DL |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
7 | H5N2004DS |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching | |
8 | H5N2005DL |
Renesas |
MOSFET | |
9 | H5N2005DL |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
10 | H5N2005DS |
Renesas |
MOSFET | |
11 | H5N2005DS |
Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching | |
12 | H5N2007FN |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |