H5N2306PF - Renesas Technology

H5N2306PF Silicon N Channel MOS FET High Speed Power Switching

H5N2306PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0031-0200Z Rev.2.00 Jun.25.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2306PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source.

Features

• Low on-resistance
• Low leakage current www.DataSheet4U.com
• High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2306PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 30 160 30 160 15 60 2.08 150
  –55 to +150 Rating V V A A A A A W °C/W °C °C Unit Avalanche current IAP Note3 Channel dissipation Pch Note2.