GFP5N60 - ETC

GFP5N60 N-Channel enhancement mode power field effect Transistors

) These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suite.

Features

2.5A VDS= 50V, ID=2.5A VGS= 0V, VDS= 25V F=1.0MHz pF ns 80 90 20 nC VDD= 300V, ID= 5A RG=25 Ω VDS= 480V, VGS= 10V ID=5A Page : 1/5 Top: 101 ID, Drain Current [ A] ID, Drain Current [ A] VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 150℃ 25℃ -55℃ 100 100 10-1 ※Notes 1.250us Pulse Test 2.Tc=25℃ 100 101 ※Notes: 1.VDS=50V 2. 250us Pulse test 10-1 2 4 6 8 10 10-1 VDS, Drain-Source Voltage[ V] VGS, Gate-Source Voltage[ V] Figure 1.On-Region Characteristics Figure 2.Transfet Characteristics 5 IDR, Reverse Drain Current [ A] Drain-Source On-Resistance 4 VGS=10V i 101 VG.