) These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60N,DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suite.
2.5A VDS= 50V, ID=2.5A VGS= 0V, VDS= 25V F=1.0MHz pF ns 80 90 20 nC VDD= 300V, ID= 5A RG=25 Ω VDS= 480V, VGS= 10V ID=5A Page : 1/5 Top: 101 ID, Drain Current [ A] ID, Drain Current [ A] VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 150℃ 25℃ -55℃ 100 100 10-1 ※Notes 1.250us Pulse Test 2.Tc=25℃ 100 101 ※Notes: 1.VDS=50V 2. 250us Pulse test 10-1 2 4 6 8 10 10-1 VDS, Drain-Source Voltage[ V] VGS, Gate-Source Voltage[ V] Figure 1.On-Region Characteristics Figure 2.Transfet Characteristics 5 IDR, Reverse Drain Current [ A] Drain-Source On-Resistance 4 VGS=10V i 101 VG.
http://www.chinahaiso.com GFP 5N60 GFP 5N60 GFP 5N60 N , DMOS 。 GFP5N60 、 ,,。 ,,T=25℃ () BV DSS ID V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GFP50N03 |
![]() General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
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2 | GFP50N06 |
![]() Chinahaiso electronic |
MOSFET |
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3 | GFP201 |
![]() TOCOS |
Cermet Industrial Panel Controls |
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4 | GFP4N60 |
![]() Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors |
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5 | GFP60N03 |
![]() General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
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6 | GFP70N03 |
![]() General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
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7 | GFP740 |
![]() Chinahaiso |
MOSFET |
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8 | GFP8N60 |
![]() ETC |
N-Channel enhancement mode power field effect Transistors |
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9 | GFP8N60 |
![]() Haiso |
N-channel power FET |
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10 | GF-1096-1 |
![]() ETC |
Coax |
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11 | GF001H |
![]() ON Semiconductor |
Power Switch |
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12 | GF063 |
![]() Tokyo Cosmos Electric |
Cermet Trimmers |
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