Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.com GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N ct E ET u R d T ENF ro P New G ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) VDS 30V RDS(ON) 11mΩ ID 60A D G * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
0.410 (10.41) 0.350 (8.89)
G PIN D S
0.160 (4.06) 0.09 (2.28)
0.560 (14.22) 0.530 (13.46)
Mechanical Data
0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83) 0.022 (0.56) 0.014 (0.36)
Dimensions in inches and (millimeters)
* May be notched or flat
Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GFP201 |
TOCOS |
Cermet Industrial Panel Controls |
|
| 2 | GFP4N60 |
Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors |
|
| 3 | GFP50N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 4 | GFP50N06 |
Chinahaiso electronic |
MOSFET |
|
| 5 | GFP5N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 6 | GFP5N60 |
Haiso |
Field effect transistor |
|
| 7 | GFP70N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 8 | GFP740 |
Chinahaiso |
MOSFET |
|
| 9 | GFP8N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 10 | GFP8N60 |
Haiso |
N-channel power FET |
|
| 11 | GF-1096-1 |
ETC |
Coax |
|
| 12 | GF001H |
ON Semiconductor |
Power Switch |
|