GFP740 - Chinahaiso

GFP740 MOSFET

 These N-channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guranteed to withstand a specified level of energy in the breakdown avalanche mode of operation  All of these power MOSFETs are designed for applications such as switching convertors relay drivers. These types can be operated direct.

Features

m MOSFET GFP 740 Parameter Gate threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate charge Gate-source charge Gate-drain charge Symbol V GS (th) I GSS I DSS R DS (on) C iss C oss C rss td (on) tr td (off) tf Qg Q gs Q gd Min 2.0 - Typ. 0.47 1250 300 80 15 25 52 25 41 6.5 23 Max 4.0 ±100 10 0.55 21 41 75 36 63 - Units V nA µA Ω pF Test conditions V DS =V GS I D =250µA V GS =±20V,.