GFP4N60 - Chinahaiso electronic

GFP4N60 N-channel enhancement mode power field effect Transistors

 These N-channel enhancement mode power field effect Transistors are produced using planar stripe DMOS technology.  This advanced technology has been especially tailored to minimize on-state resistance provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effici.

Features

e threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate charge Gate-source charge Gate-drain charge VGS(th) I GSS IDSS RDS(on) Gfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min Typ. Max Units 2.0 - 4.0 V - - ±100 nA - - 10 µA - 1.77 2.2 Ω -4- S - 520 670 - 70 90 pF - 8 11 - 13 35 - 45 100 ns - 25 60 - 35 80 - 15 20 - 3.4 - nC - 7.1 -.