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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50.
() Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃)
Absolute maximum ratings Characteristics
T=25℃ unless otherwise noted Symbol
BV DSS ID V GS E AS PD T STG Rθ JC V SD
Value
60 50 ±20 470 130 -55
–175 1.15 1.4
Units
V A V mJ W ℃ ℃/W V
Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage
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Chinahaiso electronic .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GFP50N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 2 | GFP5N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 3 | GFP5N60 |
Haiso |
Field effect transistor |
|
| 4 | GFP201 |
TOCOS |
Cermet Industrial Panel Controls |
|
| 5 | GFP4N60 |
Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors |
|
| 6 | GFP60N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 7 | GFP70N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 8 | GFP740 |
Chinahaiso |
MOSFET |
|
| 9 | GFP8N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 10 | GFP8N60 |
Haiso |
N-channel power FET |
|
| 11 | GF-1096-1 |
ETC |
Coax |
|
| 12 | GF001H |
ON Semiconductor |
Power Switch |
|