GFP50N03 - General Semiconductor

GFP50N03 N-Channel Enhancement-Mode MOSFET

GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max. 0.154 (3.91) 0.142 (3.60)Dia. 0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.09 (2.28) 0..

Features

S
• Advanced Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.41)
* May be notched or flat 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratin.