GFP5N60 |
Part Number | GFP5N60 |
Manufacturer | ETC |
Description | ) These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60N,DMOS 。 This advanced technology has been especially tailored to minimize o... |
Features |
2.5A VDS= 50V, ID=2.5A VGS= 0V, VDS= 25V F=1.0MHz
pF
ns 80 90 20 nC
VDD= 300V, ID= 5A RG=25 Ω
VDS= 480V, VGS= 10V ID=5A
Page : 1/5
Top:
101
ID, Drain Current [ A]
ID, Drain Current [ A]
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V
101
150℃ 25℃ -55℃
100
100
10-1
※Notes 1.250us Pulse Test 2.Tc=25℃
100 101
※Notes: 1.VDS=50V 2. 250us Pulse test
10-1 2 4 6 8 10
10-1
VDS, Drain-Source Voltage[ V]
VGS, Gate-Source Voltage[ V]
Figure 1.On-Region Characteristics
Figure 2.Transfet Characteristics
5
IDR, Reverse Drain Current [ A]
Drain-Source On-Resistance
4
VGS=10V
i
101
VG... |
Document |
GFP5N60 Data Sheet
PDF 122.72KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | GFP5N60 |
Haiso |
Field effect transistor | |
2 | GFP50N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET | |
3 | GFP50N06 |
Chinahaiso electronic |
MOSFET | |
4 | GFP201 |
TOCOS |
Cermet Industrial Panel Controls | |
5 | GFP4N60 |
Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors |