Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
www.DataSheet4U.com GFP70N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N E ET R T ENF G VDS 30V RDS(ON) 8mΩ ID 70A D ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) G S * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.
• Advanced Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
0.410 (10.41) 0.350 (8.89)
G PIN D S
0.160 (4.06) 0.09 (2.28)
0.560 (14.22) 0.530 (13.46)
Mechanical Data
Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case Mounting Torque: 10 in-lbs maximum Weight: 2.0g
0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.190 (4.83)
0.022 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GFP740 |
Chinahaiso |
MOSFET |
|
| 2 | GFP201 |
TOCOS |
Cermet Industrial Panel Controls |
|
| 3 | GFP4N60 |
Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors |
|
| 4 | GFP50N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 5 | GFP50N06 |
Chinahaiso electronic |
MOSFET |
|
| 6 | GFP5N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 7 | GFP5N60 |
Haiso |
Field effect transistor |
|
| 8 | GFP60N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 9 | GFP8N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 10 | GFP8N60 |
Haiso |
N-channel power FET |
|
| 11 | GF-1096-1 |
ETC |
Coax |
|
| 12 | GF001H |
ON Semiconductor |
Power Switch |
|