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GFP50N06 |
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| Part Number | GFP50N06 |
| Manufacturer | Chinahaiso electronic |
| Description | Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Juncti... |
| Features |
() Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃)
Absolute maximum ratings Characteristics
T=25℃ unless otherwise noted Symbol
BV DSS ID V GS E AS PD T STG Rθ JC V SD
Value
60 50 ±20 470 130 -55 –175 1.15 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage 1 of 2 http://www.Datasheet4U.com Chinahaiso electronic ... |
| Document |
 GFP50N06 Data Sheet
PDF 117.61KB |
| Distributor | Stock | Price | Buy |
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