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GFP50N03 |
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| Part Number | GFP50N03 |
| Manufacturer | General Semiconductor |
| Description | GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max. 0.154 (3.91) 0.142 (3.60)Dia. 0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134... |
| Features |
S
• Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.41) * May be notched or flat 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Torque: 10 in-lbs maximum Weight: 2.0g Maximum Ratin... |
| Document |
 GFP50N03 Data Sheet
PDF 110.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GFP50N06 |
Chinahaiso electronic |
MOSFET |
|
| 2 | GFP5N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 3 | GFP5N60 |
Haiso |
Field effect transistor |
|
| 4 | GFP201 |
TOCOS |
Cermet Industrial Panel Controls |
|
| 5 | GFP4N60 |
Chinahaiso electronic |
N-channel enhancement mode power field effect Transistors |
|