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GFP4N60 |
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| Part Number | GFP4N60 |
| Manufacturer | Chinahaiso electronic |
| Description | These N-channel enhancement mode power field effect Transistors are produced using planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resista... |
| Features |
e threshold voltage Gate-Body leakage Current Zero Gate voltage Drain current Static drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Total Gate charge Gate-source charge Gate-drain charge
VGS(th) I GSS IDSS
RDS(on) Gfs Ciss Coss Crss
td (on) tr
td (off) tf Qg Qgs Qgd
Min Typ. Max Units
2.0 - 4.0
V
- - ±100 nA
- - 10 µA
- 1.77 2.2
Ω
-4-
S
- 520 670
- 70 90 pF
- 8 11
- 13 35
- 45 100 ns
- 25 60
- 35 80
- 15 20
- 3.4 -
nC
- 7.1 -... |
| Document |
 GFP4N60 Data Sheet
PDF 43.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GFP201 |
TOCOS |
Cermet Industrial Panel Controls |
|
| 2 | GFP50N03 |
General Semiconductor |
N-Channel Enhancement-Mode MOSFET |
|
| 3 | GFP50N06 |
Chinahaiso electronic |
MOSFET |
|
| 4 | GFP5N60 |
ETC |
N-Channel enhancement mode power field effect Transistors |
|
| 5 | GFP5N60 |
Haiso |
Field effect transistor |
|