GB10RF120K - International Rectifier

GB10RF120K IGBT PIM MODULE

Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design • TOTALLY LEAD-.

Features

• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE VCES = 1200V IC = 13A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.68V Benefits
•
•
•
•
•
•
• Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal .