This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drives TAB 3 1 D2PAK TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diag.
■ Lower on voltage drop (VCE(sat))
■ Lower CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short-circuit withstand time 10µs
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drives
TAB
3 1
D2PAK
TAB
3 1
DPAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB10NC60K |
STMicroelectronics |
short-circuit rugged IGBT | |
2 | GB10NC60HD |
STMicroelectronics |
very fast IGBT | |
3 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT | |
4 | GB10NB60S |
STMicroelectronics |
low drop IGBT | |
5 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor | |
6 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
7 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | GB10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
9 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
10 | GB10RF120K |
International Rectifier |
IGBT PIM MODULE | |
11 | GB14C40L |
International Rectifier |
IRGB14C40L | |
12 | GB14NC60K |
STMicroelectronics |
IGBT |