GB10HF60KD - STMicroelectronics

GB10HF60KD short-circuit rugged IGBT

cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies. 3 2 1 TO-220FP TAB .

Features

■ Low on-voltage drop (VCE(sat))
■ Operating junction temperature up to 175 °C
■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s
■ Tight parameter distribution uc
■ Ultrafast soft-recovery antiparallel diode d
■ Short-circuit rugged ProApplications lete
■ Motor drives o
■ High frequency inverters bs
■ SMPS and PFC in both hard switch and Oresonant topologies t(s) -Description cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction los.