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GB10RF120K |
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| Part Number | GB10RF120K |
| Manufacturer | International Rectifier |
| Description | Bulletin I27278 01/07 GB10RF120K IGBT PIM MODULE Features • Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode w... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design • TOTALLY LEAD-FREE VCES = 1200V IC = 13A @ TC=80°C tsc > 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ. = 2.68V Benefits • • • • • • • Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal ... |
| Document |
 GB10RF120K Data Sheet
PDF 379.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
|
| 2 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|
| 3 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | GB10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 5 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode |
|