GB10NB37LZ - ST Microelectronics

GB10NB37LZ internally clamped IGBT

Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGR.

Features

C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature o o o Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175 Un it V V V A A A W W /o C KV o o C C 1/8 (
•) Pulse width limited by safe operating area Free Datasheet http://www.0PDF.com STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.2 o o C/W C/W o C/.