GB10NB60S - STMicroelectronics

GB10NB60S low drop IGBT

This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NB60ST4 STGP10NB60S GB10NB60S GP10NB60S Package D2PAK TO-220 September 2011 Doc ID 1.

Features

■ Low on-voltage drop (VCE(sat))
■ High current capability Applications
■ Light dimmer
■ Static relays
■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NB60ST4 STGP10NB60S GB10NB60S GP10NB60S Package D2PAK TO-220 September 2011 Doc ID 10985 Rev 4 Packaging Tape and reel Tube 1/19 www.st.com 19 Contents Contents STGB10NB60S, STGP10NB60S 1 E.