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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. Applications ■ High frequency inverte.
Type
STGB14NC60K STGD14NC60K
VCES
VCE(sat) (Max)@ 25°C
IC @100°C
600V 600V
<2.5V <2.5V
14A 14A
■ Low on-voltage drop (Vcesat)
■ Low Cres / Cies ratio ( no cross conduction susceptibility)
■ Short circuit withstand time 10µs
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
Applications
■ High frequency in.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GB14NC60KD |
STMicroelectronics |
600V short-circuit rugged IGBT |
|
| 2 | GB14C40L |
International Rectifier |
IRGB14C40L |
|
| 3 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
|
| 4 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|
| 5 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | GB10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 7 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode |
|
| 8 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT |
|
| 9 | GB10NB60S |
STMicroelectronics |
low drop IGBT |
|
| 10 | GB10NC60HD |
STMicroelectronics |
very fast IGBT |
|
| 11 | GB10NC60K |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 12 | GB10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|