Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD .
Most Rugged in Industry Logic-Level Gate Drive > 6KV ESD Gate Protection Low Saturation Voltage High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GB14NC60K |
STMicroelectronics |
IGBT | |
2 | GB14NC60KD |
STMicroelectronics |
600V short-circuit rugged IGBT | |
3 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor | |
4 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT | |
5 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | GB10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
7 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode | |
8 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT | |
9 | GB10NB60S |
STMicroelectronics |
low drop IGBT | |
10 | GB10NC60HD |
STMicroelectronics |
very fast IGBT | |
11 | GB10NC60K |
STMicroelectronics |
short-circuit rugged IGBT | |
12 | GB10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT |