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GB10NB60S |
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| Part Number | GB10NB60S |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal... |
| Features |
■ Low on-voltage drop (VCE(sat)) ■ High current capability Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced PowerMESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220 TAB 3 1 D2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10NB60ST4 STGP10NB60S GB10NB60S GP10NB60S Package D2PAK TO-220 September 2011 Doc ID 10985 Rev 4 Packaging Tape and reel Tube 1/19 www.st.com 19 Contents Contents STGB10NB60S, STGP10NB60S 1 E... |
| Document |
 GB10NB60S Data Sheet
PDF 578.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT |
|
| 2 | GB10NC60HD |
STMicroelectronics |
very fast IGBT |
|
| 3 | GB10NC60K |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 4 | GB10NC60KD |
STMicroelectronics |
short-circuit rugged IGBT |
|
| 5 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
|