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GB10HF60KD |
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| Part Number | GB10HF60KD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduc... |
| Features |
■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s ■ Tight parameter distribution uc ■ Ultrafast soft-recovery antiparallel diode d ■ Short-circuit rugged ProApplications lete ■ Motor drives o ■ High frequency inverters bs ■ SMPS and PFC in both hard switch and Oresonant topologies t(s) -Description cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction los... |
| Document |
 GB10HF60KD Data Sheet
PDF 449.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GB100DA60UP |
Vishay Siliconix |
Insulated Gate Bipolar Transistor |
|
| 2 | GB100TS60NPBF |
Vishay Siliconix |
Ultrafast Speed IGBT |
|
| 3 | GB10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | GB10MPS17-247 |
GeneSiC |
Silicon Carbide Schottky Diode |
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| 5 | GB10NB37LZ |
ST Microelectronics |
internally clamped IGBT |
|