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Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semico.
General Description Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench technologies Fast switching speed 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. .
FDD86102LZ - INCHANGE
isc N-Channel MOSFET Transistor FDD86102LZ ·FEATURES ·Static drain-source on-resistance: RDS(on)≤22.5mΩ ·100% avalanch.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDD86102 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDD86110 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD86113LZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD86069-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | FDD86250 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDD86250 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | FDD86252 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 8 | FDD86326 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDD86367 |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | FDD86367_F085 |
Fairchild Semiconductor |
MOSFET |
|
| 11 | FDD86369 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 12 | FDD86369 |
ON Semiconductor |
N-Channel Power MOSFET |
|