FDD86113LZ - Fairchild Semiconductor

FDD86113LZ N-Channel MOSFET

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A „ Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A „ HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has bee.

Features

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A „ Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A „ HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. „ High performance trench technology for extremely low rDS(on) „ High powe.