Shielded Gate MOSFET Technology Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd compared to competing trench technologies Fast switching speed .
General Description Shielded Gate MOSFET Technology Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd compared to competing trench technologies Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedn.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDD86102LZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDD86102LZ |
INCHANGE |
N-Channel MOSFET | |
3 | FDD86110 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDD86113LZ |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDD86069-F085 |
ON Semiconductor |
N-Channel Power MOSFET | |
6 | FDD86250 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDD86250 |
INCHANGE |
N-Channel MOSFET | |
8 | FDD86252 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDD86326 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDD86367 |
ON Semiconductor |
N-Channel MOSFET | |
11 | FDD86367_F085 |
Fairchild Semiconductor |
MOSFET | |
12 | FDD86369 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |