FDD86326 - Fairchild Semiconductor

FDD86326 N-Channel MOSFET

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching spee.

Features

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(o.