FDD86369 - Inchange Semiconductor

FDD86369 N-Channel MOSFET Transistor

·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 90 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Tempera.

Features

·Drain Current : ID= 90A@ TC=25℃
·Drain Source Voltage : VDSS= 80V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 90 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~175 ℃ .