FDD86252 - Fairchild Semiconductor

FDD86252 N-Channel MOSFET

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A „ Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistanc.

Features

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 52 mΩ at VGS = 10 V, ID = 5 A „ Max rDS(on) = 72 mΩ at VGS = 6 V, ID = 4 A „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC - DC Conversion D G S D DT O-P-2A5K2 (T O -25 2) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG .