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FDD86102LZ |
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| Part Number | FDD86102LZ |
| Manufacturer | Fairchild Semiconductor |
| Description | Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Q... |
| Features |
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A HBM ESD protection level > 6 kV typical (Note 4) Very low Qg and Qgd compared to competing trench
technologies Fast switching speed 100% UIL tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
... |
| Document |
 FDD86102LZ Data Sheet
PDF 486.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDD86102LZ |
INCHANGE |
N-Channel MOSFET |
|
| 2 | FDD86102 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDD86110 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDD86113LZ |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDD86069-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|