FDD86367 - ON Semiconductor

FDD86367 N-Channel MOSFET

MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367 Features • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A • Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A • UIS Capability • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • PowerTrain Management • Solenoid and Motor Drivers • Integrated Starter/Alternator.

Features

• Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A
• Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A
• UIS Capability
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications
• PowerTrain Management
• Solenoid and Motor Drivers
• Integrated Starter/Alternator
• Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−to−Source Voltage 80 V VGS Gate−to−Source Voltage ±20 V ID Drain Current − Continuous (VGS = 10) 100 A (Note 1) TC = 25°C Pulsed Drain Current TC = 25°C See Fig.