Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Formosa MS DB3 DIAC Features www.DataSheet4U.com 1. 2. VBO: 32V Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fl uorescent lamp ballasts. Absolute Maximum Ratings (Limiting valu.
www.DataSheet4U.com 1. 2. VBO: 32V Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fl uorescent lamp ballasts. Absolute Maximum Ratings (Limiting values) Parameter Repetitive peak on-state current (tp=20µ s F=120 Hz) Operating junction temperature range Storage temperature range Symbol ITRM Tj Tstg Value 2 -40 ~ +125 -40 ~ +125 Unit A ? ? Formosa MS 1 Formosa MS DB3 Electrical Characteristics (Tj=25? unless other.
DB3 - Shanghai Sunrise Electronics
SHANGHAI SUNRISE ELECTRONICS CO., LTD. DB3 BIDIRECTIONAL TRIGGER DIODE BREAKOVER VOLTAGE: 32V POWER: 150mW FEATURES • VB.
DB3 - Diotec Semiconductor
DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchs.
DB3 - HY ELECTRONIC
DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS FEATURES ●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 .
DB3 - Fairchild Semiconductor
DB3-DB3TG — 150mW Bi-directional Trigger Diodes DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • VBO : 32V Vers.
DB3 - STMicroelectronics
Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs.
DB3 - Dc Components
DC COMPONENTS CO., LTD. R DB3 THRU DB4 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTO.
DB3 - EIC
www.eicsemi.com DB3, DB4 VBR : 32 - 40 Volts FEATURES : * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free M.
DB3 - SEMTECH
DB3, DB4, DC34 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sea.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|
| 6 | DB-54003-470 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 7 | DB-54003L-175 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 8 | DB-54003L-175A |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 9 | DB-54003L-470 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 10 | DB-54003L-512 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 11 | DB-54003L-880 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
| 12 | DB-54003L-930 |
ETC |
HF to 2000 MHz Class AB Common Source |
|
