Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
DB3 |
Click to view a larger image
| Part Number | DB3 |
| Manufacturer | Formosa MS |
| Description | Formosa MS DB3 DIAC Features www.DataSheet4U.com 1. 2. VBO: 32V Breakover voltage range: 28 to 36V Applications Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used ... |
| Features |
www.DataSheet4U.com
1. 2.
VBO: 32V Breakover voltage range: 28 to 36V
Applications
Functioning as a trigger diode with a fixed voltage reference, the DB3 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fl uorescent lamp ballasts.
Absolute Maximum Ratings
(Limiting values) Parameter Repetitive peak on-state current (tp=20µ s F=120 Hz) Operating junction temperature range Storage temperature range Symbol ITRM Tj Tstg Value 2 -40 ~ +125 -40 ~ +125 Unit A ? ?
Formosa MS
1
Formosa MS
DB3
Electrical Characteristics
(Tj=25? unless other... |
| Document |
 DB3 Data Sheet
PDF 486.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|