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DB3 |
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| Part Number | DB3 |
| Manufacturer | Fairchild Semiconductor |
| Description | DB3-DB3TG — 150mW Bi-directional Trigger Diodes DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • VBO : 32V Version • Low break-over current • DO-35 package (JEDEC) • Hermetically sealed glass... |
| Features |
• VBO : 32V Version • Low break-over current • DO-35 package (JEDEC) • Hermetically sealed glass • Compression bonded construction • All external surfaces are corrosion resistant and terminals are readily solderable • RoHS compliant • High reliability glass passivation insuring parameter stability and protection against junction contamination. • Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed • High temperature soldering guaranteed : 260°C/10 seconds September 2010 DO-35 Color Band Denotes Cathode Absolute Maximum Ratings and Electrical Characteristics... |
| Document |
 DB3 Data Sheet
PDF 154.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|