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DB3 |
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| Part Number | DB3 |
| Manufacturer | Shanghai Sunrise Electronics |
| Description | SHANGHAI SUNRISE ELECTRONICS CO., LTD. DB3 BIDIRECTIONAL TRIGGER DIODE BREAKOVER VOLTAGE: 32V POWER: 150mW FEATURES • VBO: 26 ~ 36V version • Low breakover current • High temperature soldering guarant... |
| Features |
• VBO: 26 ~ 36V version • Low breakover current • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension TECHNICAL SPECIFICATION DO - 35 1.0 (25.4) MIN. .120 (3.0) .200 (5.1) 1.0 (25.4) MIN. .060 (1.5) .090 (2.3) DIA. MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Mounting position: Any .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Rating at 25oC ambient temperature unless otherwise specified) RATINGS Breakover Voltage * Br... |
| Document |
 DB3 Data Sheet
PDF 15.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|