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DB3 |
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| Part Number | DB3 |
| Manufacturer | HY ELECTRONIC |
| Description | DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS FEATURES ●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 150 mW DO-35(GLASS) .020 TYP. (0.51) 1.083(27.5) MIN hermetically sealed diacs... |
| Features |
●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 150 mW DO-35(GLASS) .020 TYP. (0.51) 1.083(27.5) MIN hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts(DB3,DB4) or four volts(DB6).These diacs are intended for www.DataSheet4U.com use in thyrisitors phase control.,circuits for lamp 1.0(25.4) MIN .034(0.9) DIA .028(0.7) dimming universal motor speed control and heat control ●This diocle is also avaiable in the DO-41case. .205(5.2) MAX .107(2.7) DIA .080(2.0... |
| Document |
 DB3 Data Sheet
PDF 74.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|