The DB-499D-470 is a NPN silicon RF power amplifier designed for UHF 2-way radio applications Table 1. Device summary Order codes DB-499D-470 February 2009 Rev 1 1/11 www.st.com 11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents DB.
■
■
■
■
■
■
■
Excellent thermal stability Frequency: 430 - 470 MHz Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficiency: 52 % BeO free amplifier
Mechanical specification: L = 60 mm, W = 30 mm
".W
Description
The DB-499D-470 is a NPN silicon RF power amplifier designed for UHF 2-way radio applications Table 1.
Device summary
Order codes DB-499D-470
February 2009
Rev 1
1/11
www.st.com 11
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
www.DataSheet4U.com
Contents
DB-499D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes | |
2 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs | |
3 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC | |
4 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs | |
5 | DB-54003-470 |
ETC |
HF to 2000 MHz Class AB Common Source | |
6 | DB-54003L-175 |
ETC |
HF to 2000 MHz Class AB Common Source | |
7 | DB-54003L-175A |
ETC |
HF to 2000 MHz Class AB Common Source | |
8 | DB-54003L-470 |
ETC |
HF to 2000 MHz Class AB Common Source | |
9 | DB-54003L-512 |
ETC |
HF to 2000 MHz Class AB Common Source | |
10 | DB-54003L-880 |
ETC |
HF to 2000 MHz Class AB Common Source | |
11 | DB-54003L-930 |
ETC |
HF to 2000 MHz Class AB Common Source | |
12 | DB-54008L-175 |
ETC |
HF to 2000 MHz Class AB Common Source |