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DB3 |
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| Part Number | DB3 |
| Manufacturer | MCC |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features l The three layer, two terminal, axial... |
| Features |
l The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) • Moisture Sensitivity: Level 1 l These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and heat control. Type number is marked. Maximum Ratings l Operating Temperature: -40oC to +125oC l Storage Temperature: -40oC to +125oC l Thermal Resistance Junction to Lead:167oC/W l Thermal Resistance Junction to Amb... |
| Document |
 DB3 Data Sheet
PDF 514.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs |
|
| 2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC |
|
| 3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes |
|
| 4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor |
|
| 5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |
|