DB3 |
Part Number | DB3 |
Manufacturer | Diotec Semiconductor |
Description | DB 3, DB 4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Trigger-Dioden (DIAC) Breakover voltage Durchbruchsspannung Peak pulse current Max. Triggerimpuls Glass case Glasgehäuse Weight app... |
Features |
uchspannug Foldback voltage – Spannungs-Rücksprung )I = IBO to/auf IF = 10 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft dV/dt = 10V/:s RthA 1 ) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlußdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 420 01.10.2002 DB 3, DB 4 Typical characteristic of a DIAC – Typische DIAC-Kennlinie Test circuit for a thyristor trigger – Meßschaltung für Thyristor-Zündschaltung 01.10.2002 421 ... |
Document |
DB3 Data Sheet
PDF 251.45KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | DB-2933-54 |
STMicroelectronics |
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs | |
2 | DB-3 |
Semtech Corporation |
Silicon Bidirectional DIAC | |
3 | DB-4 |
Leshan Radio Company |
Bi-directional trigger diodes | |
4 | DB-499D-470 |
ST Microelectronics |
RF power amplifier using 1 x START499D NPN RF silicon transistor | |
5 | DB-54003-470 |
STMicroelectronics |
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs |