European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 126 A 15 6,5 5,5 14 SW27 40 18 M12 Typ D126A Schaltsymbol Kathode Anschlußlasche Gehäuseboden Gehäuseboden Anschlußlasche D126B 2 8 Anode 58 ±2 VW K July 1996 D 126 A 45 Elektrische Eigenschaften Electrical properties H.
Durchlaßspannung Schleusenspannung Ersatzwiderstand Sperrstrom Durchbruchspannung Characteristic values on-state voltage threshold voltage slope resistance reverse current breakdown voltage tvj = t vj max , iF = 600 A tvj = t vj max tvj = t vj max tvj = t vj max , V R = V RRM tvj = +25 °C... t vj max VT VT(TO) rT iR V(BR) max. min. max. 2,8 0,86 3,2 30 4,8 V V mΩ mA kV Thermische Eigenschaften Innerer Widerstand Thermal properties thermal resistance, junction to case Θ = 180° sin DC R thCK tvj max tc op tstg R thJC max. max. max. 0,257 °C/W 0,250 °C/W 0,04 °C/W 160 -40...+160 -40...+160 °C .
European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1260UK |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | D1262 |
Panasonic |
2SD1262 | |
3 | D1262A |
Panasonic |
2SD1262A | |
4 | D1263A |
Panasonic Semiconductor |
2SD1263A | |
5 | D1264 |
Panasonic Semiconductor |
2SD1264 | |
6 | D1264 |
NEC |
2SD1264 | |
7 | D1265 |
SavantIC |
2SD1265 | |
8 | D1265C5 |
Infineon |
SiC Schottky Barrier diodes | |
9 | D1265C6 |
Infineon |
650V SiC Schottky Diode | |
10 | D1266 |
Panasonic Semiconductor |
2SD1266 | |
11 | D1266A |
Panasonic Semiconductor |
2SD1266A | |
12 | D1267 |
Panasonic Semiconductor |
2SD1267 |