D1265C5 - Infineon

D1265C5 SiC Schottky Barrier diodes

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Gener.

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 27 mA2)
 Optimized for high temperature operation 1 2 CASE 3 Benefits
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher sys.